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Volume 25, Issue 4
Multistep Finite Volume Approximations to the Transient Behavior of a Semiconductor Device on General 2D or 3D Meshes

Min Yang

J. Comp. Math., 25 (2007), pp. 485-496.

Published online: 2007-08

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  • Abstract

In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.

  • Keywords

Semiconductor device, Unstructured meshes, Finite volume, Multistep method, Error estimates.

  • AMS Subject Headings

65N30, 65M25.

  • Copyright

COPYRIGHT: © Global Science Press

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@Article{JCM-25-485, author = {Min Yang}, title = {Multistep Finite Volume Approximations to the Transient Behavior of a Semiconductor Device on General 2D or 3D Meshes}, journal = {Journal of Computational Mathematics}, year = {2007}, volume = {25}, number = {4}, pages = {485--496}, abstract = {

In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.

}, issn = {1991-7139}, doi = {https://doi.org/}, url = {http://global-sci.org/intro/article_detail/jcm/8706.html} }
TY - JOUR T1 - Multistep Finite Volume Approximations to the Transient Behavior of a Semiconductor Device on General 2D or 3D Meshes AU - Min Yang JO - Journal of Computational Mathematics VL - 4 SP - 485 EP - 496 PY - 2007 DA - 2007/08 SN - 25 DO - http://doi.org/ UR - https://global-sci.org/intro/article_detail/jcm/8706.html KW - Semiconductor device, Unstructured meshes, Finite volume, Multistep method, Error estimates. AB -

In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations. Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.

Min Yang. (2007). Multistep Finite Volume Approximations to the Transient Behavior of a Semiconductor Device on General 2D or 3D Meshes. Journal of Computational Mathematics. 25 (4). 485-496. doi:
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