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Commun. Comput. Phys., 15 (2014), pp. 506-555.
Published online: 2014-02
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We critically compare the practicality and accuracy of numerical approximations of phase field models and sharp interface models of solidification. Here we focus on Stefan problems, and their quasi-static variants, with applications to crystal growth. New approaches with a high mesh quality for the parametric approximations of the resulting free boundary problems and new stable discretizations of the anisotropic phase field system are taken into account in a comparison involving benchmark problems based on exact solutions of the free boundary problem.
}, issn = {1991-7120}, doi = {https://doi.org/10.4208/cicp.190313.010813a}, url = {http://global-sci.org/intro/article_detail/cicp/7104.html} }We critically compare the practicality and accuracy of numerical approximations of phase field models and sharp interface models of solidification. Here we focus on Stefan problems, and their quasi-static variants, with applications to crystal growth. New approaches with a high mesh quality for the parametric approximations of the resulting free boundary problems and new stable discretizations of the anisotropic phase field system are taken into account in a comparison involving benchmark problems based on exact solutions of the free boundary problem.