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Mixed Layer Problem of a Three-Dimensional Drift-Diffusion Model for Semiconductors
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@Article{JPDE-30-264,
author = {Liu , ChundiWang , Shu and Xu , Wenqing},
title = {Mixed Layer Problem of a Three-Dimensional Drift-Diffusion Model for Semiconductors},
journal = {Journal of Partial Differential Equations},
year = {2017},
volume = {30},
number = {3},
pages = {264--280},
abstract = { The quasineutral limit and the mixed layer problem of a three-dimensional drift-diffusion model is discussed in this paper. For the Neumann boundaries and the general initial data, the quasineutral limit is proven rigorously with the help of the weighted energy method, the matched asymptotic expansion method of singular perturbation problem and the entropy production inequality.},
issn = {2079-732X},
doi = {https://doi.org/10.4208/jpde.v30.n3.6},
url = {http://global-sci.org/intro/article_detail/jpde/10469.html}
}
TY - JOUR
T1 - Mixed Layer Problem of a Three-Dimensional Drift-Diffusion Model for Semiconductors
AU - Liu , Chundi
AU - Wang , Shu
AU - Xu , Wenqing
JO - Journal of Partial Differential Equations
VL - 3
SP - 264
EP - 280
PY - 2017
DA - 2017/08
SN - 30
DO - http://doi.org/10.4208/jpde.v30.n3.6
UR - https://global-sci.org/intro/article_detail/jpde/10469.html
KW - Drift-diffusion model
KW - quasineutral limit
KW - mixed layer
AB - The quasineutral limit and the mixed layer problem of a three-dimensional drift-diffusion model is discussed in this paper. For the Neumann boundaries and the general initial data, the quasineutral limit is proven rigorously with the help of the weighted energy method, the matched asymptotic expansion method of singular perturbation problem and the entropy production inequality.
Liu , ChundiWang , Shu and Xu , Wenqing. (2017). Mixed Layer Problem of a Three-Dimensional Drift-Diffusion Model for Semiconductors.
Journal of Partial Differential Equations. 30 (3).
264-280.
doi:10.4208/jpde.v30.n3.6
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