@Article{CiCP-11-797,
author = {D. Barettin, S. Madsen, B. Lassen and M. Willatzen},
title = {Computational Methods for Electromechanical Fields in Self-Assembled Quantum Dots},
journal = {Communications in Computational Physics},
year = {2012},
volume = {11},
number = {3},
pages = {797--830},
abstract = {<p style="text-align: justify;">A detailed comparison of continuum and valence force field strain calculations in quantum-dot structures is presented with particular emphasis to boundary
conditions, their implementation in the finite-element method, and associated implications for electronic states. The first part of this work provides the equation framework
for the elastic continuum model including piezoelectric effects in crystal structures
as well as detailing the Keating model equations used in the atomistic valence force
field calculations. Given the variety of possible structure shapes, a choice of pyramidal, spherical and cubic-dot shapes is made having in mind their pronounced shape
differences and practical relevance. In this part boundary conditions are also considered; in particular the relevance of imposing different types of boundary conditions is
highlighted and discussed. In the final part, quantum dots with inhomogeneous indium concentration profiles are studied in order to highlight the importance of taking
into account the exact In concentration profile for real quantum dots. The influence of
strain, electric-field distributions, and material inhomogeneity of spherical quantum
dots on electronic wavefunctions is briefly discussed.</p>},
issn = {1991-7120},
doi = {https://doi.org/10.4208/cicp.111110.110411a},
url = {http://global-sci.org/intro/article_detail/cicp/7392.html}
}